Near Defect Free GaN Substrates

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

Title Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

A number of wurtzite GaN epilayers directly grown on 4H-SiC ~0001! misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ;70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the...

Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-e...